STMicroelectronics, Leti announce cooperation to develop GaN-on-Silicon tech
STMicroelectronics and Leti announced their cooperation to industrialize GaN-on-Silicon technologies for power switching devices. This power GaN-on-Si technology will enable ST to address high-efficiency, high-power applications, including automotive on-board chargers for hybrid and electric vehicles, wireless charging, and servers. The collaboration focuses on developing and qualifying advanced power GaN-on-Silicon diode and transistor architectures on 200mm wafers, a market that the research firm IHS Markit estimates to grow at a CAGR of more than 20% from 2019 to 2024. Together, in the framework of IRT Nanoelec, ST and Leti are developing the process technology on Leti's 200mm R&D line and expect to have validated engineering samples in 2019. In parallel, ST will set up a fully qualified manufacturing line, including GaN/Si hetero-epitaxy, for initial production running in ST's front-end wafer fab in Tours, France, by 2020.